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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 SEPTEMBER 94 FEATURES * 15 Volt VCEO * Gain of 200 at IC=2 Amps * Very low saturation voltage ZTX788A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25C derate above 25C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -20 -15 -5 -10 -3 1.5 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/C C Operating and Storage Temperature Range -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 300 250 200 80 3-271 MIN. -20 -15 -5 TYP. -30 -20 -8.5 -0.1 -10 -0.1 MAX. UNIT V V V A A A CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-10V VCB=-10V, Tamb=100C VEB=-4V IC=-0.1A, IB=-2mA* IC=-2A, IB=-20mA* IC=-3A, IB=-200mA* IC=-2A, IB=-20mA* IC=-2A, VCE=-3V* IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-2A, VCE=-1V* IC=-10A, VCE=-2V* -0.025 -0.035 V -0.25 -0.32 V -0.28 -0.33 V -0.85 -0.8 800 -1.0 V V ZTX788A ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Transition Frequency Output Capacitance Switching Times SYMBOL fT Cobo ton toff MIN. 100 TYP. 150 30 40 500 60 MAX. UNIT MHz pF ns ns CONDITIONS. IC=-50mA, VCE=-5V f=50MHz VCB=-10V, f=1MHz IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT C/W C/W C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 200 Max Power Dissipation - (Watts) Thermal Resistance (C/W) D=1 (D.C.) 2.0 t1 D=t1/tP tP C 1.5 as e te m pe 1.0 Am ra 100 D=0.5 bie tu nt t re em 0.5 0 per at u re D=0.2 D=0.1 Single Pulse -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-272 |
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